BAV21W-7-F
- 제조업체 부품 번호
- BAV21W-7-F
- 제조업체
- Diodes Incorporated
- 포장/케이스
- -
- 데이터시트
- BAV21W-7-F
- 설명
- DIODE GEN PURP 200V 200MA SOD123
- 재고
- 35000
견적 요청(RFQ)
- * 연락처 이름:
- 회사:
- * 이메일:
- 전화:
- 리뷰:
- 제조업체 :
- Diodes Incorporated
- 제품 분류 :
- Discrete Semiconductor Products > Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 5pF @ 0V, 1MHz
- Current - Average Rectified (Io) :
- 200mA
- Current - Reverse Leakage @ Vr :
- 100 nA @ 200 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -65°C ~ 150°C
- Package / Case :
- SOD-123
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- 50 ns
- Speed :
- Small Signal =< 200mA (Io), Any Speed
- Supplier Device Package :
- SOD-123
- Voltage - DC Reverse (Vr) (Max) :
- 200 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.25 V @ 200 mA
- 데이터 목록
- BAV21W-7-F
제조업체 관련 제품
디렉토리 관련 제품
관련 제품
부분 | 제조업체 | 재고 | 설명 |
---|---|---|---|
BAV20 | onsemi | 35,000 | DIODE GEN PURP 200V 200MA DO35 |
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BAV20,133 | Nexperia | 156 | DIODE GEN PURP 150V 250MA ALF2 |
BAV20,143 | Nexperia | 35,000 | DIODE GEN PURP 150V 250MA ALF2 |
BAV20-TAP | Vishay | 35,000 | DIODE GEN PURP 150V 250MA DO35 |
BAV20-TR | Vishay | 10,661 | DIODE GEN PURP 150V 250MA DO35 |
BAV200-GS08 | Vishay | 35,000 | DIODE GEN PURP 50V 250MA SOD80 |
BAV200-GS18 | Vishay | 35,000 | DIODE GEN PURP 50V 250MA SOD80 |
BAV201-GS08 | Vishay | 35,000 | DIODE GEN PURP 100V 250MA SOD80 |
BAV201-GS18 | Vishay | 35,000 | DIODE GEN PURP 100V 250MA SOD80 |
BAV20143 | NXP Semiconductors | 175,000 | NOW NEXPERIA BAV20 - RECTIFIER D |
BAV202-GS08 | Vishay | 1,446 | DIODE GEN PURP 150V 250MA SOD80 |
BAV202-GS18 | Vishay | 8,480 | DIODE GEN PURP 150V 250MA SOD80 |
BAV203-GS08 | Vishay | 35,000 | DIODE GEN PURP 200V 250MA SOD80 |