- 제조업체 :
- EPC
- 제품 분류 :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 5A (Ta)
- Drain to Source Voltage (Vdss) :
- 200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 140 pF @ 100 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Die
- Power Dissipation (Max) :
- -
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 3A, 5V
- Supplier Device Package :
- Die Outline (4-Solder Bar)
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- +6V, -4V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- 데이터 목록
- EPC2012C
제조업체 관련 제품
디렉토리 관련 제품
관련 제품
| 부분 | 제조업체 | 재고 | 설명 |
|---|---|---|---|
| EPC200-CSP5 | ESPROS Photonics AG | 694 | SENSOR PHOTODIODE 850NM |
| EPC2001 | EPC | 35,000 | GANFET N-CH 100V 25A DIE OUTLINE |
| EPC2001C | EPC | 177,960 | GANFET N-CH 100V 36A DIE OUTLINE |
| EPC2007 | EPC | 35,000 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2007C | EPC | 39,486 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2010 | EPC | 35,000 | GANFET N-CH 200V 12A DIE |
| EPC2010C | EPC | 12,863 | GANFET N-CH 200V 22A DIE OUTLINE |
| EPC2012 | EPC | 35,000 | GANFET N-CH 200V 3A DIE |
| EPC2014 | EPC | 35,000 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2014C | EPC | 108,798 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2015 | EPC | 35,000 | GANFET N-CH 40V 33A DIE OUTLINE |
| EPC2015C | EPC | 21,387 | GANFET N-CH 40V 53A DIE |
| EPC2016 | EPC | 35,000 | GANFET N-CH 100V 11A DIE |
| EPC2016C | EPC | 114,967 | GANFET N-CH 100V 18A DIE |
| EPC2018 | EPC | 35,000 | GANFET N-CH 150V 12A DIE |
