IQE030N06NM5CGATMA1
- 제조업체 부품 번호
- IQE030N06NM5CGATMA1
- 포장/케이스
- -
- 데이터시트
- IQE030N06NM5CGATMA1
- 설명
- TRENCH 40<-<100V PG-TTFN-9
- 재고
- 35000
견적 요청(RFQ)
- * 연락처 이름:
- 회사:
- * 이메일:
- 전화:
- 리뷰:
- 제조업체 :
- Infineon Technologies
- 제품 분류 :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 21A (Ta), 137A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 49 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3800 pF @ 30 V
- Mounting Type :
- Surface Mount, Wettable Flank
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Power Dissipation (Max) :
- 2.5W (Ta), 107W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 3mOhm @ 20A, 10V
- Supplier Device Package :
- PG-TTFN-9-1
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.3V @ 50µA
- 데이터 목록
- IQE030N06NM5CGATMA1
제조업체 관련 제품
디렉토리 관련 제품
관련 제품
부분 | 제조업체 | 재고 | 설명 |
---|---|---|---|
IQE006NE2LM5ATMA1 | Infineon Technologies | 1 | MOSFET N-CH 25V 41A/298A 8TSON |
IQE006NE2LM5CGATMA1 | Infineon Technologies | 35,000 | MOSFET N-CH 25V 41A/298A IPAK |
IQE008N03LM5ATMA1 | Infineon Technologies | 464 | TRENCH <= 40V PG-TSON-8 |
IQE008N03LM5CGATMA1 | Infineon Technologies | 747 | TRENCH <= 40V PG-TTFN-9 |
IQE013N04LM6ATMA1 | Infineon Technologies | 1,117 | MOSFET N-CH 40V 31A/205A 8TSON |
IQE013N04LM6CGATMA1 | Infineon Technologies | 4,816 | 40V N-CH FET SOURCE-DOWN CG 3X3 |
IQE030N06NM5ATMA1 | Infineon Technologies | 35,000 | TRENCH 40<-<100V PG-TSON-8 |
IQE050N08NM5ATMA1 | Infineon Technologies | 5,000 | TRENCH 40<-<100V PG-TSON-8 |
IQE050N08NM5CGATMA1 | Infineon Technologies | 35,000 | TRENCH 40<-<100V PG-TTFN-9 |
IQE065N10NM5ATMA1 | Infineon Technologies | 15,000 | TRENCH >=100V PG-TSON-8 |
IQE065N10NM5CGATMA1 | Infineon Technologies | 5,000 | TRENCH >=100V PG-TTFN-9 |