SPD30N03S2L07GBTMA1

제조업체 부품 번호
SPD30N03S2L07GBTMA1
제조업체
Infineon Technologies
포장/케이스
-
데이터시트
SPD30N03S2L07GBTMA1
설명
MOSFET N-CH 30V 30A TO252-3
재고
35000

견적 요청(RFQ)

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제조업체 :
Infineon Technologies
제품 분류 :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2530 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
136W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
6.7mOhm @ 30A, 10V
Supplier Device Package :
PG-TO252-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2V @ 85µA
데이터 목록
SPD30N03S2L07GBTMA1

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