Diodes - Rectifiers - Single
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- Diodes - Rectifiers - Single
- Taiwan Semiconductor
- Speed : Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) : 50 ns
- Operating Temperature - Junction : -55°C ~ 175°C
- Capacitance @ Vr, F : 65pF @ 4V, 1MHz
- Current - Reverse Leakage @ Vr : 10 µA @ 600 V
- Supplier Device Package : DO-201AD
12 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Taiwan Semiconductor | DIODE GEN PURP 600... |
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1,173
In-stock
|
Get Quote | ||
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Taiwan Semiconductor | DIODE GEN PURP 600... |
-
|
35,000
In-stock
|
Get Quote | ||
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Taiwan Semiconductor | DIODE GEN PURP 600... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Taiwan Semiconductor | DIODE GEN PURP 600... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Taiwan Semiconductor | DIODE GEN PURP 600... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Taiwan Semiconductor | DIODE GEN PURP 600... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Taiwan Semiconductor | DIODE GEN PURP 600... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Taiwan Semiconductor | DIODE GEN PURP 600... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Taiwan Semiconductor | DIODE GEN PURP 600... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Taiwan Semiconductor | DIODE GEN PURP 600... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Taiwan Semiconductor | DIODE GEN PURP 600... |
-
|
35,000
In-stock
|
Get Quote |