Transistors - Bipolar (BJT) - RF

Frequency - Transition:
Noise Figure (dB Typ @ f):
Power - Max:
Voltage - Collector Emitter Breakdown (Max):
Image Part Manufacturer Description Price Stock Action
MT3S113P(TE12L,F) Toshiba Electronic Devices and Storage Corporation
RF TRANS NPN 5.3V 7...
-
1,582
In-stock
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MT3S111P(TE12L,F) Toshiba Electronic Devices and Storage Corporation
RF TRANS NPN 6V 8G...
-
674
In-stock
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