Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Mounting Type : Through Hole
- Power - Max : 800 mW
- Supplier Device Package : TO-92-3
- Voltage - Collector Emitter Breakdown (Max) : 60 V
- Transistor Type : NPN
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 2V
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