Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Operating Temperature : 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) : 300 V
- Frequency - Transition : 50MHz
- Transistor Type : PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce : 25 @ 30mA, 10V
- Power - Max : 625 mW
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Product Status : Active
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