Transistors - Bipolar (BJT) - Single
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- onsemi (2)
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- Transistors - Bipolar (BJT) - Single
- Operating Temperature : 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) : 300 V
- Frequency - Transition : 50MHz
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Power - Max : 1 W
- Current - Collector (Ic) (Max) : 100 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 20mA, 10V
- Product Status : Obsolete
3 Records