Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package : TO-92-3
- Power - Max : 625 mW
- Current - Collector Cutoff (Max) : 10nA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) : 40 V
- Vce Saturation (Max) @ Ib, Ic : 1V @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 150mA, 10mV
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