Transistors - Bipolar (BJT) - Single
- Supplier Device Package:
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- Transistors - Bipolar (BJT) - Single
- NTE Electronics, Inc.
- Power - Max : 150 W
- Voltage - Collector Emitter Breakdown (Max) : 100 V
- Current - Collector Cutoff (Max) : 1mA
- Vce Saturation (Max) @ Ib, Ic : 3V @ 120mA, 12A
- Transistor Type : PNP - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce : 750 @ 6A, 3V
2 Records