Transistors - Bipolar (BJT) - Single
- Filter:
-
- Transistors - Bipolar (BJT) - Single
- Power - Max : 200 mW
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 6V
- Operating Temperature : 150°C (TJ)
- Supplier Device Package : SOT-323
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
1 Records