Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Power - Max : 200 mW
- Transistor Type : NPN
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic : 400mV @ 20mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 25 V
- Product Status : Active
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 25V 0.8A T... |
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1,708
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