Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- YANGJIE
- Power - Max : 200 mW
- Transistor Type : PNP
- Vce Saturation (Max) @ Ib, Ic : 650mV @ 5mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 220 @ 2mA, 5V
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Supplier Device Package : SOT-323
- Voltage - Collector Emitter Breakdown (Max) : 65 V
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