Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- NXP Semiconductors
- Power - Max : 200 mW
- Voltage - Collector Emitter Breakdown (Max) : 65 V
- Mounting Type : Surface Mount
- Vce Saturation (Max) @ Ib, Ic : 400mV @ 5mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 5V
- Current - Collector (Ic) (Max) : 100 mA
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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NXP Semiconductors | TRANS NPN 65V 0.1A S... |
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480,000
In-stock
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Get Quote | |||
NXP Semiconductors | TRANS NPN 65V 0.1A S... |
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337,120
In-stock
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Get Quote |