Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Diodes Incorporated
- Power - Max : 200 mW
- Frequency - Transition : 50MHz
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) : 300 V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 30mA, 10V
- Operating Temperature : -55°C ~ 150°C (TJ)
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Diodes Incorporated | TRANS NPN 300V 0.2A ... |
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380,409
In-stock
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Get Quote | ||
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Diodes Incorporated | TRANS NPN 300V 0.2A ... |
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|
35,000
In-stock
|
Get Quote |