Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- NXP Semiconductors
- Power - Max : 250 mW
- Product Status : Active
- Operating Temperature : 150°C (TJ)
- Supplier Device Package : TO-236AB
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Current - Collector (Ic) (Max) : 500 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 250 @ 100mA, 1V
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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NXP Semiconductors | NEXPERIA BC807-40 - ... |
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35,000
In-stock
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