Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- NXP Semiconductors
- Power - Max : 250 mW
- Product Status : Active
- Operating Temperature : 150°C (TJ)
- Supplier Device Package : TO-236AB
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic : 620mV @ 50mA, 500mA
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