Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- NXP Semiconductors
- Power - Max : 250 mW
- Product Status : Active
- Operating Temperature : 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) : 45 V
- Frequency - Transition : 100MHz
- Current - Collector (Ic) (Max) : 100 mA
- Current - Collector Cutoff (Max) : 20nA (ICBO)
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NXP Semiconductors | NOW NEXPERIA BCX... |
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80,000
In-stock
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