Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- NXP Semiconductors
- Power - Max : 250 mW
- Product Status : Active
- Operating Temperature : 150°C (TJ)
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic : 620mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 45 V
- Supplier Device Package : SOT-23
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