Transistors - Bipolar (BJT) - Single
- Filter:
-
- Transistors - Bipolar (BJT) - Single
- NXP Semiconductors
- Power - Max : 250 mW
- Current - Collector Cutoff (Max) : 10nA (ICBO)
- Operating Temperature : 150°C (TJ)
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 25mA, 20V
- Voltage - Collector Emitter Breakdown (Max) : 300 V
- Vce Saturation (Max) @ Ib, Ic : 600mV @ 5mA, 30mA
1 Records