Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- NXP Semiconductors
- Power - Max : 250 mW
- Current - Collector Cutoff (Max) : 10nA (ICBO)
- Operating Temperature : 150°C (TJ)
- Frequency - Transition : 100MHz
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
- Product Status : Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce : 290 @ 2mA, 10V
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NXP Semiconductors | TRANS NPN 50V 0.1A S... |
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35,000
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