Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Power - Max : 350 mW
- Product Status : Active
- Mounting Type : Surface Mount
- Voltage - Collector Emitter Breakdown (Max) : 60 V
- Current - Collector Cutoff (Max) : 10nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic : 1.6V @ 50mA, 500mA
- Transistor Type : PNP + Diode (Isolated)
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