Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Power - Max : 350 mW
- Product Status : Obsolete
- Mounting Type : Through Hole
- Supplier Device Package : TO-92S
- Vce Saturation (Max) @ Ib, Ic : 500mV @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 100mA, 1V
- Voltage - Collector Emitter Breakdown (Max) : 25 V
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