Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Power - Max : 350 mW
- Product Status : Obsolete
- Mounting Type : Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 5V
- Frequency - Transition : 150MHz
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Collector Emitter Breakdown (Max) : 30 V
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