Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Power - Max : 800 mW
- Mounting Type : Through Hole
- Operating Temperature : -65°C ~ 200°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) : 80 V
- Transistor Type : NPN
- Package / Case : TO-205AD, TO-39-3 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 150mA, 10V
- Frequency - Transition : 400MHz
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