Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Power - Max : 800 mW
- Mounting Type : Through Hole
- Current - Collector (Ic) (Max) : 700 mA
- Frequency - Transition : 50MHz
- Voltage - Collector Emitter Breakdown (Max) : 60 V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 2V
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
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