Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- NTE Electronics, Inc.
- Power - Max : 800 mW
- Current - Collector Cutoff (Max) : 10nA (ICBO)
- Mounting Type : Through Hole
- Supplier Device Package : TO-39
- Product Status : Active
- Voltage - Collector Emitter Breakdown (Max) : 80 V
- Operating Temperature : -65°C ~ 200°C (TJ)
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