Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Product Status : Obsolete
- Operating Temperature : 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic : 1V @ 50mA, 500mA
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 120 V
- Power - Max : 1 W
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 100mA, 5V
- Mounting Type : Through Hole
4 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 120V 0.8A ... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 120V 0.8A ... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 120V 0.8A ... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 120V 0.8A ... |
-
|
35,000
In-stock
|
Get Quote |