Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce:
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- Filter:
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Product Status : Obsolete
- Package / Case : TO-226-3, TO-92-3 Long Body
- Voltage - Collector Emitter Breakdown (Max) : 150 V
- Power - Max : 800 mW
- Transistor Type : NPN
- Vce Saturation (Max) @ Ib, Ic : 1V @ 1mA, 10mA
3 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 150V 0.05A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 150V 0.05A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 150V 0.05A... |
-
|
35,000
In-stock
|
Get Quote |