Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Product Status : Obsolete
- Power - Max : 350 mW
- Operating Temperature : -55°C ~ 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic : 600mV @ 5mA, 100mA
- Frequency - Transition : 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 5V
- Current - Collector Cutoff (Max) : 15nA (ICBO)
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