Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Product Status : Obsolete
- Transistor Type : NPN
- Current - Collector Cutoff (Max) : 10µA (ICBO)
- Current - Collector (Ic) (Max) : 2 A
- DC Current Gain (hFE) (Min) @ Ic, Vce : 2000 @ 1A, 2V
- Voltage - Collector Emitter Breakdown (Max) : 60 V
5 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 60V 2A TO... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 60V 2A TO... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 60V 2A TO... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 60V 2A TO... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 60V 2A TO... |
-
|
35,000
In-stock
|
Get Quote |