Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Product Status : Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 100mA, 5V
- Power - Max : 1 W
- Operating Temperature : 150°C (TJ)
- Current - Collector Cutoff (Max) : 100µA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) : 600 V
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 600V 1A M... |
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35,000
In-stock
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