Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Product Status : Obsolete
- Frequency - Transition : 100MHz
- Mounting Type : Surface Mount
- Voltage - Collector Emitter Breakdown (Max) : 120 V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 2mA, 6V
- Supplier Device Package : S-Mini
1 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS PNP 120V 0.1A ... |
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4,826
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