Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Supplier Device Package : DPAK
- Voltage - Collector Emitter Breakdown (Max) : 100 V
- Operating Temperature : -65°C ~ 150°C (TJ)
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic : 400mV @ 300mA, 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1A, 2V
2 Records