Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Vce Saturation (Max) @ Ib, Ic : 400mV @ 50mA, 1A
- Operating Temperature : 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN
- Power - Max : 1 W
- Supplier Device Package : 3-MP
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 100mA, 2V
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