Transistors - Bipolar (BJT) - Single
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- Nexperia (1)
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- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic : 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) : 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 5V
- Voltage - Collector Emitter Breakdown (Max) : 45 V
- Operating Temperature : 150°C (TJ)
- Supplier Device Package : DFN1010D-3
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