Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic : 400mV @ 5mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 5V
- Operating Temperature : 150°C (TJ)
- Frequency - Transition : 100MHz
- Package / Case : 3-XDFN Exposed Pad
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 45 V
- Power - Max : 360 mW
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