Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Microchip Technology
- Vce Saturation (Max) @ Ib, Ic : 500mV @ 4mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 20mA, 10V
- Voltage - Collector Emitter Breakdown (Max) : 250 V
- Mounting Type : Through Hole
- Power - Max : 800 mW
- Current - Collector (Ic) (Max) : 2 µA
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