Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Vce Saturation (Max) @ Ib, Ic : 500mV @ 50mA, 1A
- Current - Collector (Ic) (Max) : 2 A
- Mounting Type : Through Hole
- Power - Max : 900 mW
- Frequency - Transition : 100MHz
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 50 V
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