Transistors - Bipolar (BJT) - Single
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- onsemi (2)
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- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic : 500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 80 V
- Mounting Type : Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 150mA, 2V
- Supplier Device Package : TO-92-3
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
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