Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic : 600mV @ 5mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 110 @ 2mA, 5V
- Transistor Type : NPN
- Power - Max : 310 mW
- Voltage - Collector Emitter Breakdown (Max) : 45 V
- Product Status : Active
- Operating Temperature : -65°C ~ 150°C (TJ)
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Diodes Incorporated | GENERAL PURPOSE ... |
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35,000
In-stock
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