Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic : 700mV @ 50mA, 500mA
- Operating Temperature : 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) : 45 V
- Package / Case : 3-XDFN Exposed Pad
- Transistor Type : NPN
- Mounting Type : Surface Mount, Wettable Flank
- Supplier Device Package : DFN1110D-3
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 100mA, 1V
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