Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Vce Saturation (Max) @ Ib, Ic : 700mV @ 50mA, 500mA
- Operating Temperature : 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) : 45 V
- Supplier Device Package : SOT-23-3
- Power - Max : 310 mW
- Transistor Type : NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 100mA, 1V
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