Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- NXP Semiconductors
- Vce Saturation (Max) @ Ib, Ic : 700mV @ 50mA, 500mA
- Operating Temperature : 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) : 45 V
- Transistor Type : PNP
- Supplier Device Package : TO-236AB
- DC Current Gain (hFE) (Min) @ Ic, Vce : 250 @ 100mA, 1V
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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NXP Semiconductors | NEXPERIA BC807-40 - ... |
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35,000
In-stock
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