Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Diodes Incorporated
- Vce Saturation (Max) @ Ib, Ic : 700mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 45 V
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Frequency - Transition : 100MHz
- Power - Max : 310 mW
- Operating Temperature : -55°C ~ 150°C (TJ)
- Transistor Type : NPN
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