Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic : 700mV @ 50mA, 500mA
- Current - Collector (Ic) (Max) : 800 mA
- Operating Temperature : -55°C ~ 150°C (TJ)
- Transistor Type : NPN
- Voltage - Collector Emitter Breakdown (Max) : 25 V
- Power - Max : 625 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 100mA, 1V
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