Transistors - Bipolar (BJT) - Single
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- Nexperia (19)
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- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic : 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Operating Temperature : 150°C (TJ)
- DC Current Gain (hFE) (Min) @ Ic, Vce : 250 @ 100mA, 1V
- Voltage - Collector Emitter Breakdown (Max) : 45 V
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Power - Max : 250 mW
22 Records
