Transistors - Bipolar (BJT) - Single
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- onsemi (2)
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- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic : 1.6V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 60 V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 150mA, 10V
- Operating Temperature : 150°C (TJ)
- Frequency - Transition : 200MHz
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
4 Records