Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Voltage - Collector Emitter Breakdown (Max) : 25 V
- Mounting Type : Through Hole
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic : 500mV @ 80mA, 800mA
- Product Status : Active
- Transistor Type : NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 100mA, 1V
2 Records